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/* NOR flash devices */
#include "memory.h"
typedef struct pflash_t pflash_t;
/* pflash_cfi01.c */
pflash_t *pflash_cfi01_register(target_phys_addr_t base,
DeviceState *qdev, const char *name,
target_phys_addr_t size,
BlockDriverState *bs,
uint32_t sector_len, int nb_blocs, int width,
uint16_t id0, uint16_t id1,
uint16_t id2, uint16_t id3, int be);
/* pflash_cfi02.c */
pflash_t *pflash_cfi02_register(target_phys_addr_t base,
DeviceState *qdev, const char *name,
target_phys_addr_t size,
BlockDriverState *bs, uint32_t sector_len,
int nb_blocs, int nb_mappings, int width,
uint16_t id0, uint16_t id1,
uint16_t id2, uint16_t id3,
uint16_t unlock_addr0, uint16_t unlock_addr1,
int be);
MemoryRegion *pflash_cfi01_get_memory(pflash_t *fl);
/* nand.c */
DeviceState *nand_init(BlockDriverState *bdrv, int manf_id, int chip_id);
void nand_setpins(DeviceState *dev, uint8_t cle, uint8_t ale,
uint8_t ce, uint8_t wp, uint8_t gnd);
void nand_getpins(DeviceState *dev, int *rb);
void nand_setio(DeviceState *dev, uint32_t value);
uint32_t nand_getio(DeviceState *dev);
uint32_t nand_getbuswidth(DeviceState *dev);
#define NAND_MFR_TOSHIBA 0x98
#define NAND_MFR_SAMSUNG 0xec
#define NAND_MFR_FUJITSU 0x04
#define NAND_MFR_NATIONAL 0x8f
#define NAND_MFR_RENESAS 0x07
#define NAND_MFR_STMICRO 0x20
#define NAND_MFR_HYNIX 0xad
#define NAND_MFR_MICRON 0x2c
/* onenand.c */
void *onenand_raw_otp(DeviceState *onenand_device);
/* ecc.c */
typedef struct {
uint8_t cp; /* Column parity */
uint16_t lp[2]; /* Line parity */
uint16_t count;
} ECCState;
uint8_t ecc_digest(ECCState *s, uint8_t sample);
void ecc_reset(ECCState *s);
extern VMStateDescription vmstate_ecc_state;
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